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Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 30A 3.0V 47ns
High Speed PT IGBTs for 40 - 100kHz Switching
TO-263 (IXGA)
G E C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped Inductive Load TC = 25C
Maximum Ratings 600 600 20 30 60 30 13 150 ICM = 60 @ VCES 220 -55 ... +150 150 -55 ... +150 W C C C C C Nm/lb.in. g g g G C E
C (TAB)
V V V V A A A A A
TO-220 (IXGP)
G
C
C (TAB) E
TO-247 (IXGH)
G = Gate E = Emitter Features
C = Collector TAB = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE VCE = VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = 20V IC = 20A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 3.5 5.5 25 V A
High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100142A(06/09)
300 A 100 nA 2.6 1.8 3.0 V V
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1
Symbol Test Conditions Characteristic Values
www..com IXGP30N60C3C1 IXGH30N60C3C1
(TJ = 25C Unless Otherwise Specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS TO-220 TO-247 Inductive Load, TJ = 125C IC = 20A, VGE = 15V VCE = 300V, RG = 5 Note 2 Inductive Load, TJ = 25C IC = 20A, VGE = 15V VCE = 300V, RG = 5 Note 2 IC = 20A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 20A, VCE = 10V, Note 1
Min.
9
Typ.
16 1075 196 29 38 8 17 17 20 0.12 42 47 0.09 16 21 0.16 70 90 0.33 0.50 0.21
Max.
S pF pF pF nC nC nC ns ns mJ 75 0.18 ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W C/W
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF RthJC IF = 10A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
1.10 C/W
Notes
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2
IXGA30N60C3C1
TO-263 (IXGA) Outline
IXGP30N60C3C1 IXGH30N60C3C1
TO-220 (IXGP) Outline
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
TO-247 (IXTH) Outline
Dim.
1
2
3
P
e
Terminals: 1 - Gate
2 - Drain
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1
IXGP30N60C3C1 IXGH30N60C3C1
Fig. 1. Output Characteristics @ 25C
40 35 30 VGE = 15V 13V
180 160 140
Fig. 2. Extended Output Characteristics @ 25C
VGE = 15V
11V
IC - Amperes
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 7V 9V
120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16
13V
11V
9V
7V 18 20
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
40 35 30 VGE = 15V 13V 11V
1.1
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.0 I
C
= 40A
VCE(sat) - Normalized
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
9V
0.9
0.8 I 0.7 I = 10A
C
= 20A
0.6
C
7V
0.5
2.8
3.2
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.5 TJ = 25C
70 60 50
Fig. 6. Input Admittance
5.0
I 4.0 20A 3.5 10A 3.0
C
= 40A
IC - Amperes
4.5
VCE - Volts
40 30 20 10 0 TJ = 125C 25C - 40C
2.5 7 8 9 10 11 12 13 14 15
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1
IXGP30N60C3C1 IXGH30N60C3C1
Fig. 7. Transconductance
24 TJ = - 40C 20 25C
14 12 VCE = 300V I C = 20A I G = 10 mA 16
Fig. 8. Gate Charge
g f s - Siemens
16 125C 12
VGE - Volts
50 60 70 80
10 8 6 4
8
4
2 0
0 0 10 20 30 40
0
5
10
15
20
25
30
35
40
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000
Fig. 10. Reverse-Bias Safe Operating Area
70
f = 1 MHz
Capacitance - PicoFarads
Cies
60 50
1,000
IC - Amperes
40 30 20 10
100
Coes
TJ = 125C RG = 5 dV / dt < 10V / ns
Cres 10 0 5 10 15 20 25 30 35 40
0 100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance for IGBT
1.00
Z (th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_30N60C3C1(4D)6-03-09
IXGA30N60C3C1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
0.9 0.8 0.7 Eoff VCE = 300V Eon 0.8
IXGP30N60C3C1 IXGH30N60C3C1
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
0.6 Eoff 0.5 VCE = 300V Eon 0.6
--I = 40A
0.7 0.6 0.5 0.4 0.3 0.2 I C = 20A 0.1 0.0
---0.5 TJ = 125C
TJ = 125C , VGE = 15V
C
RG = 5 , VGE = 15V
Eoff - MilliJoules
0.6 0.5 0.4 0.3 0.2 0.1 4 6 8 10 12 14 16 18 20
Eoff - MilliJoules
0.4
0.4
Eon - MilliJoules
Eon - MilliJoules
0.3 TJ = 25C
0.3
0.2
0.2
0.1
0.1
0.0 10 15 20 25 30 35 40
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
0.8 0.7 0.6 Eoff VCE = 300V Eon 0.8
180 170 160
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
140
----
0.7 0.6 0.5 I C = 40A 0.4 0.3 I C = 20A 0.2
RG = 5 , VGE = 15V
tfi
VCE = 300V
td(off) - - - -
130 120
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
0.5 0.4 0.3 0.2 0.1 0 25 35 45 55 65 75 85 95 105 115
t f i - Nanoseconds
150 140 130 120 110 100
110 100 I
C
Eoff - MilliJoules
Eon - MilliJoules
= 40A
90 80 70 I
C
= 20A
60 50 40
0.1 0.0 125
90 80 4 6 8 10 12 14 16 18 20
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
180 160 140 110
160 140 120 100
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
90
t fi
VCE = 300V
td(off) - - - -
100 90
tfi
VCE = 300V
td(off) - - - -
RG = 5 , VGE = 15V
RG = 5 , VGE = 15V
80
t d(off) - Nanoseconds
t f i - Nanoseconds
120 100 80 60 40 20 0 10 15 20 25 30 35 40 TJ = 125C
80 70 60 50 40 30 20
t f i - Nanoseconds
70 60
t d(off) - Nanoseconds
I C = 40A, 20A 80 60 40 20 25 35 45 55 65 75 85 95 105 115 50 40 30 20 125
TJ = 25C
IC - Amperes
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
90 80 70 30
IXGP30N60C3C1 IXGH30N60C3C1
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
60 24
28
tri
VCE = 300V
td(on) - - - I C = 40A
tri
50
td(on) - - - 22
TJ = 125C, VGE = 15V
26 24 22 20 18
RG = 5 , VGE = 15V VCE = 300V
t r i - Nanoseconds
TJ = 125C
20
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
60 50 40 30
40
30
18
TJ = 25C
20 16
I
20 10 4 6 8 10 12
C
= 20A
16 14
10
14
0 10 15 20 25 30 35 40
12
14
16
18
20
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
75 21
20
Fig. 21. Forward Current vs. Forward Voltage
tri
65
td(on) - - - 20
16 TJ = 25C TJ = 125C
RG = 5 , VGE = 15V VCE = 300V
t d(on) - Nanoseconds
t r i - Nanoseconds
55
I C = 40A
19
IF - Amperes
12
45
18
8
35
17
I
25
C
= 20A
16
4
15 25 35 45 55 65 75 85 95 105 115
15 125
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
TJ - Degrees Centigrade
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diode
10.000
1.000
Z (th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_30N60C3C1(4D)6-03-09

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